(57) ABSTRACT A light-emitting device has a first conductive semiconductor layer; an active
layer arranged on the first conductive semiconductor layer, and including a plurality of first …

The invention relates to an optoelectronic semiconductor element (100) comprising a
semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second …

A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit
caused by a threading dislocation generated in the first semiconductor layer; an active layer; …

Disclosed in one embodiment is a light-emitting device comprising: a first semiconductor
layer; an active layer arranged on the first semiconductor layer and including a plurality of …

In an embodiment, an optoelectronic semiconductor component includes a first
semiconductor layer of a first conductivity type, a second semiconductor layer of a second …

H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface
barrier specially adapted for light emission; Processes or apparatus specially adapted for …

A component having an enhanced efficiency and a method for producing a component are
disclosed. In an embodiment, a component includes a semiconductor layer sequence …

The invention relates to an optoelectronic semiconductor element (100) comprising a
semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second …

The invention relates to a component (10) having a semi conductor layer sequence, which
has ap-conducting semi conductor layer (1), an n-conducting semiconductor layer (2), and …