Valley-dependent topological phase transition and quantum anomalous valley Hall effect in single-layer RuClBr

H Sun, SS Li, W Ji, CW Zhang - Physical Review B, 2022 - APS
Quantum anomalous valley Hall effect (QAVHE), which combines both the features of QAHE
and AVHE, is both fundamentally intriguing and practically appealing, but is experimentally …

Monolayer : An intrinsic room-temperature ferrovalley semiconductor

K Sheng, Q Chen, HK Yuan, ZY Wang - Physical Review B, 2022 - APS
Two-dimensional ferrovalley semiconductors with robust room-temperature ferromagnetism
and sizable valley polarization hold great prospects for future miniature information storage …

Van der Waals Electrides

J Zhou, JY You, YM Zhao, YP Feng… - Accounts of Chemical …, 2024 - ACS Publications
Conspectus Electrides make up a fascinating group of materials with unique physical and
chemical properties. In these materials, excess electrons do not behave like normal …

Valley-related multiple Hall effect in monolayer

X Feng, X Xu, Z He, R Peng, Y Dai, B Huang, Y Ma - Physical Review B, 2021 - APS
Two-dimensional materials with valley-related multiple Hall effect are both fundamentally
intriguing and practically appealing for exploring novel phenomena and applications, but …

Layer Hall effect in multiferroic two-dimensional materials

Y Feng, Y Dai, B Huang, L Kou, Y Ma - Nano Letters, 2023 - ACS Publications
The layer Hall effect (LHE) is of fundamental and practical importance in condensed-matter
physics and material science; however, it was rarely observed and usually based on the …

Progress on two-dimensional ferrovalley materials

P Li, B Liu, S Chen, WX Zhang, ZX Guo - Chinese Physics B, 2024 - iopscience.iop.org
The electron's charge and spin degrees of freedom are at the core of modern electronic
devices. With the in-depth investigation of two-dimensional materials, another degree of …

Realizing spontaneous valley polarization and topological phase transitions in monolayer ScX2 (X= Cl, Br, I)

Y Wu, J Tong, L Deng, F Luo, F Tian, G Qin, X Zhang - Acta Materialia, 2023 - Elsevier
Manipulating the valley degree of freedom besides the charge and spin has attracted
increasing interest in fundamental sciences and emerging applications. In this study, the …

Possible electronic state quasi-half-valley metal in a monolayer

SD Guo, YL Tao, HT Guo, ZY Zhao, B Wang, G Wang… - Physical Review B, 2023 - APS
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley
semiconductors and half-valley metals (HVM) have been proposed, which possess intrinsic …

Reversible switching of anomalous valley Hall effect in ferrovalley Janus and the multiferroic heterostructure

RJ Sun, R Liu, JJ Lu, XW Zhao, GC Hu, XB Yuan… - Physical Review B, 2022 - APS
The central issue for practical applications of the anomalous valley Hall effect (AVHE) is the
tunable and nonvolatile nature of the valley splitting. We predict a type of ferrovalley …

Distinct ferrovalley characteristics of the Janus RuClX (X= F, Br) monolayer

Y Ma, Y Wu, J Tong, L Deng, X Yin, L Zhou, X Han… - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional ferrovalley materials should simultaneously possess three characteristics,
that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic …