BACKGROUND Optoelectronic integrated circuits (ICs) include both elec tronic and optical
elements Within a single chip. Typical elec tronic elements include? eld effect transistors …

US 2011/0180795 A1 Jul. 28, 2011(57) ABSTRACT 51) Int. C An electro-optic device is
disclosed. The electro-optic device (51) Int. Cl. includes an insulating layer, a first …

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical
waveguide, disposed on a SOI or other silicon based substrate. APN junction is formed at …

The portion of the first light beam propagates in a first 4,135,822 A 1, 1979 Ezekiel counter-
propagating direction, and the portion of the second 4,234,357. A 1 1/1980 Scheppele light …

The present invention provides silicon based thin-film structures that can be used to form
high frequency optical modulators. Devices of the invention are formed as layered structures …

US7672558B2 - Silicon optical device - Google Patents US7672558B2 - Silicon optical device
- Google Patents Silicon optical device Download PDF Info Publication number US7672558B2 …

(57) ABSTRACT A high-index contrast waveguide component is presented, which is based
on the fast changing of the transmission prop erties of an optical waveguide by applying …

A nanocomposite optical modulator device comprising an optically transparent electro-optic
region. The electro-optic region exhibiting second-order optical nonlinearity properties. The …

Silicon based thin-film optical waveguides and method of making. A method in accordance
with one aspect of the present invention generally comprises the steps of providing a …

(57) ABSTRACT A Semiconductor-insulator-Semiconductor (SIS) device is presented along
with a device for fabricating the Same. The SIS device includes a lower Semiconductor …