Ultra-Low Temperature Ozone Annealing for Decreasing Sub-Threshold Swing of Oxide Thin Film Transistors
QZ Chen, JH Yan, WQ Fu, MJ Zhao, YS Cho… - Available at SSRN … - papers.ssrn.com
Indium gallium zinc oxide thin film transistor (IGZO-TFT) with low sub-threshold swing (SS) is
realized by ozone (O3) annealing. The O3-annealed temperature is varied to systematically …
realized by ozone (O3) annealing. The O3-annealed temperature is varied to systematically …