(57) ABSTRACT A high-pressure processing system includes a first chamber, a second
chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a …

A high-pressure processing system for processing a layer on a substrate includes a first
chamber, a support to hold the substrate in the first chamber, a second chamber adjacent …

Embodiments of the systems and methods herein are directed towards forming, via ALD or
CVD, a protective film in-situ on a plurality of interior components of a process chamber. The …

Embodiments of the disclosure relate to an apparatus and method for annealing one or
more semiconductor substrates. In one embodiment, a processing chamber is disclosed …

A system for annealing substrates is provided. The system includes a first boiler having an
input coupled to a water source; a second boiler having an input connected to an output of …

(57) ABSTRACT A high-pressure processing system for processing a substrate includes a
first chamber, a pedestal positioned within the first chamber to support the substrate, a …

Embodiments of the disclosure relate to an apparatus and method for annealing
semiconductor substrates. In one embodiment, a batch processing chamber is disclosed …

The present disclosure relates to high pressure processing apparatus for semiconductor
processing. The apparatus described herein include a high pressure process chamber and …

Apparatuses for annealing semiconductor substrates, such as a batch processing chamber,
are provided herein. The batch processing chamber includes a chamber body enclosing an …

Embodiments of the disclosure generally relate to a method of improving quality of a barrier
layer suitable for forming high aspect ratio through substrate vias. In one example, a method …