Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …

This article proposes a health indicator estimation method based on the digital-twin concept
aiming for condition monitoring of power electronic converters. The method is noninvasive …

In order to prevent catastrophic failures in power electronic systems, multiple failure
precursors have been identified to characterize the degradation of power devices. However …

This paper presents an silicon carbide (SiC) MOSFET health condition monitoring method
based on the switching transient measurements. Specifically, the device's turn-on time is …

In this article, an in situ SiC mosfet degradation monitoring method using readily available
converter sensors is presented. Device's drain-source resistance in saturation and ohmic …

In order to take full advantage of fast and efficient switching performance of emerging GaN
power devices, it is important for circuit designers to understand the unique features of …

In this article, we propose a monitoring procedure based on a multilayer neural network with
multivalued neurons (MLMVN) capable of preventing catastrophic failures of dc–dc …

As automotive manufacturers move toward silicon carbide (SiC) MOSFET-based traction
inverters, practical online switch condition monitoring solutions are crucial to address …

While silicon carbide power mosfet s have significantly superior figures-of-merit in
comparison to conventional silicon devices, they have seen relatively limited adoption in …

Package-related aging (PRA) defects can cause severe failures in SiC mosfet s, so an aging
evaluation method is essential. on-state resistance (R ON) is the most widely used aging …