We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt).
Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses …

As the interconnect delay exceeds the gate delay, the integrated circuit (IC) technology has
evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic …

Due to its ultrathin feature, graphene has been recently proposed as diffusion barrier layer
for Cu wires. This paper is geared toward developing an equivalent single-conductor (ESC) …

The miniaturization of electronic devices brings severe challenges in the deposition of metal
interconnects in back end of line processing due to a continually decreasing volume …

This paper presents the investigations of crosstalk effects in ternary logic‐based coupled
interconnects. The crosstalk analysis is investigated for coupled copper interconnects and …

Size reduction of the barrier and liner stack for copper interconnects is a major bottleneck in
further down-scaling of transistor devices. The role of the barrier is to prevent diffusion of Cu …

The electromagnetic field radiated by Cu-graphene interconnects is predicted in the
frequency domain using the equivalent single conductor formulation, and it is compared with …

In this paper, authors investigated the effects of SEM Vacc during Physical Failure Analysis
on transistor's electrical parameters, specifically I-off, I-sat and Vt. It was verified that 2kV …

With continued scaling of integrated circuits into deep nanoscale fabrication technologies,
the aggravated effects of reliability degradation and variability in process parameters can …

Design Closure Page 1 295 CONTENTS 13.1 Introduction 296 13.1.1 Evolution of the Design
Closure Flow 296 13.1.1.1 ASIC Design Flow 297 13.1.1.2 Evolution of Design Constraints …