Impact of doping density on junctionless gate stack FD-SOI MOSFET for Analog/RF application

A survey on the latest FET technology for samsung industry

AL Rikabi, HTH Salim, GM Ali - AIP Conference Proceedings, 2023 - pubs.aip.org
In semiconductor electronics firms like Samsung, field effect transistor (FET) technology is
the main design layout for high-performance applications. Gate-all-around (GAA) FETs …
被引用次数：2 相关文章 所有 3 个版本
[PDF] academia.edu

Design of a 30 nm Germanium FinFET by Parameter Optimization

G Mogosetso, C Lebekwe… - Advanced Engineering …, 2022 - Trans Tech Publ
Germanium (Ge) is envisioned as a suitable channel candidate for field-effect transistors
(FET). Properties of Ge such as high carrier mobility, compatibility with Si and adaptability …
相关文章 所有 4 个版本

Influence of High-k Oxide Thickness on Gate Stack DMG Junctionless SOI MOSFET

M Goswami, A Chattopadhyay… - 2021 Devices for …, 2021 - ieeexplore.ieee.org
The present paper describes the influence of Gate stacking on Dual Material (DM)
Junctionless (JL) SOI MOSFET operating in Junction Accumulation Mode (JAM). The …
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