Review of FinFET devices and perspective on circuit design challenges
RK Maurya, B Bhowmick - Silicon, 2022 - Springer
In recent technology, the demand for 3D multiple-gate MOSFETs such as FinFETs increase.
In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below …
In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below …
Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Charge-plasma based process variation immune junctionless transistor
In this letter, we report for the first time a distinctive approach of implementing a junctionless
transistor (JLT) without doping (doping-less) the ultrathin silicon film. A charge-plasma …
transistor (JLT) without doping (doping-less) the ultrathin silicon film. A charge-plasma …
Recent trend of FinFET devices and its challenges: A review
Recent technological demand of FinFETs have been explored and reviewed in this work.
The downscaling of the conventional MOSFET urge to the researchers to innovate new …
The downscaling of the conventional MOSFET urge to the researchers to innovate new …
First demonstration of junctionless accumulation-mode bulk FinFETs with robust junction isolation
TK Kim, DH Kim, YG Yoon, JM Moon… - IEEE electron device …, 2013 - ieeexplore.ieee.org
A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented
based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width …
based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width …
Impact of channel thickness on the performance of GaAs and GaSb DG-JLMOSFETs: an atomistic tight binding based evaluation
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …
Analytical modelling and simulation of negative capacitance junctionless FinFET considering fringing field effects
This article proposes an analytical model for channel potential and threshold voltage for
negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has …
negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has …
Reliable and low power Negative Capacitance Junctionless FinFET based 6T SRAM cell
The increasing demand of portable gadgets for emerging VLSI applications call for the low
power 6 T static random-access memory (SRAM) cell design. In this work, a 6 T SRAM cell …
power 6 T static random-access memory (SRAM) cell design. In this work, a 6 T SRAM cell …
Sub-20 nm GaAs junctionless FinFET for biosensing application
This work proposes a dielectric modulated GaAs junctionless FinFET as a biological sensor
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
Revisiting the doping requirement for low power junctionless MOSFETs
MS Parihar, A Kranti - Semiconductor Science and Technology, 2014 - iopscience.iop.org
In this work, we revisit the requirement of higher channel doping (≥ 10 19 cm− 3) in
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …