Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate

Wafer-Scale Porous Germanium Bilayer Structure Formation by Fast Bipolar Electrochemical Etching

L Mouchel, B Ilahi, J Cho, K Dessein, A Boucherif - Thin Solid Films, 2024 - Elsevier
Abstract Recently, porous Germanium (PGe) structures have gained significant attention as
a promising engineering material for a broad range of applications due to the versatility of its …
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