We demonstrate quantum Hall resistance measurements with metrological accuracy in a
small cryogen-free system operating at a temperature of around 3.8 K and magneticfields …

We use phenomenological modelling and detailed experimental studies of charge carrier
transport to investigate the dependence of the electrical resistivity, ρ, on gate voltage, V g, for …

Epitaxial graphene has proven itself to be the best candidate for quantum electrical
resistance standards due to its wide quantum Hall plateaus with exceptionally high …

We integrated graphene with asymmetric metal metasurfaces and optimised the geometry
dependent photoresponse towards optoelectronic molecular sensor devices. Through …

We have investigated the disorder of epitaxial graphene close to the charge neutrality point
(CNP) by various methods:(i) at room temperature, by analyzing the dependence of the …

We report on nonlocal transport in large-scale epitaxial graphene on silicon carbide under
an applied external magnetic field. The nonlocality is related to the emergence of the …

We investigate the basic charge and heat transport properties of charge neutral
epigraphene at sub-kelvin temperatures, demonstrating a nearly logarithmic dependence of …

We study electron transport in nanostructures patterned in bilayer graphene patches grown
epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from …

Chemical‐vapor‐deposited graphene is used extensively to fabricate devices. However, the
charge‐neutral point (CNP) of this material appears at a relatively high back‐gate voltage …

We have studied the electronic properties of epitaxial graphene devices patterned in a
meander shape with the length up to a few centimeters and the width of few tens of microns …