This article proposes an analytic charge-based model that incorporates interface trapping.
The model's applicability to all operating zones includes various interface trap charges with …

This paper presents, the design architecture of the Heterojunction Surrounding Gate (HSG)
Tunnel Field Effect Transistor (TFET) employing Single Material (SM) gate and Dual Material …

In this work, we have analyzed the digital and analog performance for InGaAs/InP
heterojunction Gate all around MOS structure. A detailed study on the impact of Barrier …

This paper describes the design structure of the nanowire tunnel field effect transistor (NW-
TFET). The device simulation carried on nanohub device simulation tool. The parameters …

We propose a numerical compact model for describing the drain current in ballistic mode by
using an expression to represent the transmission coefficients for all operating regions. This …

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate
Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum …

This paper shows analysis, simulation and comparison of different characteristics of Carbon
Nanotube MOSFET and Silicon Nanowire MOSFET. Here we analyze and compare drain …

A silicon multi-gate nanowire simulation is presented in this paper. The simulation studies
are conducted based on electrical parameters such as Current-Voltage (IV) characteristics …

The aim of this paper is to improve the performance of nanodevices yielding the overall gain
of electronic applications. The performance in low-power consumption, high sensitivity and …

The structure of 3-dimensional (3D) nanowire MUGFET is proposed. The simulation results
are based on the study of electrical parameters such as electrical potential, charge density …