[图书][B] Modeling and design of electromagnetic compatibility for high-speed printed circuit boards and packaging

XC Wei - 2017 - taylorfrancis.com
Modeling and Design of Electromagnetic Compatibility for High-Speed Printed Circuit
Boards and Packaging presents the electromagnetic modelling and design of three major …

Electrical modeling and characterization of shield differential through-silicon vias

Q Lu, Z Zhu, Y Yang, R Ding - IEEE Transactions on Electron …, 2015 - ieeexplore.ieee.org
An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D
integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using …

Modeling of carbon nanotube-based differential through-silicon vias in 3-D ICs

WS Zhao, QH Hu, K Fu, YY Zhang… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article proposes a novel differential through-silicon via (D-TSV) structure, which is filled
with vertically aligned carbon nanotube (VACNT) array. Two metal pads are deposited on …

Metal proportion optimization of annular through-silicon via considering temperature and keep-out zone

X Yin, Z Zhu, Y Yang, R Ding - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
For annular through-silicon via (TSV)-based 3-D integrated circuits (3-D ICs), a greater TSV
metal proportion of annular TSV leads to lower temperature but induces larger keep-out …

Signal integrity design and analysis of differential high-speed serial links in silicon interposer with through-silicon via

K Cho, Y Kim, H Lee, J Song, J Park… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
In this paper, we, for the first time, designed and analyzed differential high-speed serial links
of the silicon interposer including differential through-silicon-via (TSV) channels for a high …

Modeling and optimization of multiground TSVs for signals shield in 3-D ICs

C Qu, R Ding, X Liu, Z Zhu - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents an effective loop impedance extraction method and a model of a signal
through-silicon via (TSV) surrounded by multiground TSVs. According to this method, the …

Wideband modeling and characterization of differential through-silicon vias for 3-D ICs

WS Zhao, J Zheng, F Liang, K Xu… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents the wideband modeling and analysis of differential through-silicon vias
(D-TSVs) in 3-D ICs. An equivalent-circuit model of the ground-signal-signal-ground-type D …

3-D compact 3-dB branch-line directional couplers based on through-silicon via technology for millimeter-wave applications

Q Lu, Z Zhu, G Shan, Y Liu, X Liu… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A bandwidth optimization model for a novel equivalent 90° transmission-line section is
proposed in this paper. Furthermore, the structure of 3-D compact 3-dB branch-line …

Transient analysis of TSV equivalent circuit considering nonlinear MOS capacitance effects

S Piersanti, F De Paulis, A Orlandi… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into
account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into …

Pin-opt: Graph Representation Learning for Large-scale Pin Assignment Optimization of Microbumps considering Signal and Power Integrity

J Park, S Choi, K Son, J Lee, T Shin… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In this work, we propose a deep reinforcement learning (DRL) framework called Pin-opt,
designed to create a reusable solver capable of optimizing pin assignment to minimize …