Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs
Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped
buffers showing small current-collapse effects and dynamic RDS, on increase can …
buffers showing small current-collapse effects and dynamic RDS, on increase can …
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
We report for the first time the DC and microwave characteristics of sub-micron gate (∼ 0.3
µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si (111) …
µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si (111) …
Precursors for carbon doping of GaN in chemical vapor deposition
X Li, Ö Danielsson, H Pedersen, E Janzén… - Journal of Vacuum …, 2015 - pubs.aip.org
Methane (CH 4), ethylene (C 2 H 4), acetylene (C 2 H 2), propane (C 3 H 8), iso-butane (iC 4
H 10), and trimethylamine [N (CH 3) 3] have been investigated as precursors for intentional …
H 10), and trimethylamine [N (CH 3) 3] have been investigated as precursors for intentional …
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
F González-Posada, JA Bardwell, S Moisa… - Applied surface …, 2007 - Elsevier
The chemical composition of the AlGaN/GaN surface during typical process steps in
transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps …
transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps …
Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors
The first demonstration of the m-plane AlGaN/GaN heterojunction field-effect transistor was
reported. This transistor exhibited enhancement-mode operation, with the threshold voltage …
reported. This transistor exhibited enhancement-mode operation, with the threshold voltage …
Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates
MR Ramdani, M Chmielowska, Y Cordier, S Chenot… - Solid-state …, 2012 - Elsevier
The effect of carbon doping on crystal quality and electrical isolation has been investigated
in GaN based structures grown by ammonia assisted molecular beam epitaxy on silicon …
in GaN based structures grown by ammonia assisted molecular beam epitaxy on silicon …
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
G Jiang, Y Lv, Z Lin, Y Liu, M Wang, H Zhou - Superlattices and …, 2021 - Elsevier
Abstract Identically-sized AlGaN/GaN HFETs were fabricated on three AlGaN/GaN
heterostructure with differing AlGaN barrier layer thicknesses of 15.5 nm, 19.3 nm and 24.7 …
heterostructure with differing AlGaN barrier layer thicknesses of 15.5 nm, 19.3 nm and 24.7 …
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
In this work, we show that, by carefully designing the subsurface Fe doping profile in SI-GaN
templates grown by MOVPE and by optimizing the MBE regrowth conditions, a highly …
templates grown by MOVPE and by optimizing the MBE regrowth conditions, a highly …