In this paper, we report on the bias oscillation of GaN-based Gunn diodes realized on an+-
GaN substrate. Different contact materials, ambient gases, and pulsewidths were used and …

The authors report lattice specific heat of bulk hexagonal GaN measured by the heat flow
method in the temperature range of 20–300 K and by the adiabatic method in the range of 5 …

Hot-electron transport was probed by nanosecond-pulsed measurements for a nominally
undoped two-dimensional channel confined in a nearly lattice-matched Al 0.82 In 0.18 …

The conditions for microwave power generation with hot-electron transport are investigated
in a submicron GaN diode when it operates in the limited space-charge accumulation (LSA) …

The conductance and the current-voltage characteristics of metallic single wall carbon
nanotube bundles have been measured between 4.2 and 330 K using 10–30 ns electric …

Electron transport characteristics were measured at room temperature applying nanosecond
duration electrical pulses on two-dimensional electron gas (2DEG) channel in AlGaN/GaN …

The maximal value of thermal conductivity κmax of the perfect wurtzite GaN crystal
containing isotopes of natural abundance is estimated. Our upper limit of κ= 4800W/K m at …

The conditions for microwave power generation in a submicrometer GaN diode, with a
relatively lightly doped active channel, coupled to an external resonant circuit are …

Recent experimental study of electron transport in ZnO/ZnMgO and BeZnMgO/ZnO
heterostructures containing two-dimensional electron gas (2DEG) channels of two polarities …

The current saturation in a gateless AlGaN/GaN heterostructure device is investigated in this
letter. Analysis of the micro-Raman spectroscopy results indicated that the self-heating effect …