A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …

We present a detailed investigation of the effects that optical-phonon confinement has on the
electronic transport properties of GaAs-based midinfrared multiple-quantum-well (MQW) …

A detailed investigation was made using Raman spectroscopy of the longitudinal and
transverse optical phonons in the disordered alloy Al x Ga 1− x As at room temperature …

We have calculated electron–optical-phonon scattering rates in ultrathin GaAs/Al x Ga 1− x
As alloy quantum-well systems of finite depth, based on a fully microscopic lattice dynamics …

We present the determination of aluminum concentration x in epitaxial films of Al x Ga 1-x As
grown by Molecular Beam Epitaxy (MBE) on GaAs (100) substrates. A large variety of …

A comprehensive theoretical study of phonons in cubic GaN, AlN, Ga1− xAlxN, and (GaN)
m/(AlN) n superlattices (SLs) is reported using both simple and microscopic models. The …

In this work we study the nuances of composition determination of Al x Ga 1− x As alloys by
Raman spectroscopy. We mainly focus on understanding the effect of induced strain on the …

We present the Raman and infrared spectra of GaAs/Al x Ga 1− x As heterostructures with
ultrathin (1 ML thick) Al x Ga 1− x As barriers. The local-mode modification of a one …

The results of energy gap variation in ternary alloy semiconductors (A1− xBxC) are reported
within the tight-binding (TB) framework of Koster and Slater by universalizing TB parameters …

First-and second-order Raman scattering has been studied in epitaxial AlAs grown by solid-
source molecular-beam epitaxy. A strong resonant enhancement of dipole-forbidden one …