Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions
P Chava, Z Fekri, Y Vekariya, T Mikolajick… - Applied Physics …, 2023 - pubs.aip.org
Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …
Computational methods for 2D materials: discovery, property characterization, and application design
The discovery of two-dimensional (2D) materials comes at a time when computational
methods are mature and can predict novel 2D materials, characterize their properties, and …
methods are mature and can predict novel 2D materials, characterize their properties, and …
Advanced DFT–NEGF transport techniques for novel 2-D material and device exploration including HfS 2/WSe 2 van der Waals heterojunction TFET and WTe 2/WS 2 …
We present, here, advanced density functional theory and nonequilibrium Green's function
(DFT–NEGF) techniques that we have implemented in our ATOmistic MOdeling Solver …
(DFT–NEGF) techniques that we have implemented in our ATOmistic MOdeling Solver …
Modeling of electron devices based on 2-D materials
The advent of graphene and related 2-D materials has attracted the interest of the electron
device research community in the past 14 years. The possibility to boost the transistor …
device research community in the past 14 years. The possibility to boost the transistor …
Switching mechanism and the scalability of vertical-TFETs
In this brief, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked
heretojunctions from 2-D transition metal dichalcogenide materials are studied by atomistic …
heretojunctions from 2-D transition metal dichalcogenide materials are studied by atomistic …
Scalability assessment of Group-IV mono-chalcogenide based tunnel FET
Selection of appropriate channel material is the key to design high performance tunnel field
effect transistor (TFET), which promises to outperform the conventional metal oxide …
effect transistor (TFET), which promises to outperform the conventional metal oxide …
Realization and Performance Analysis of Facile-Processed -IDE-Based Multilayer HfS2/HfO2 Transistors
A new and interesting field-effect transistor (FET) structure based on multilayer HfS 2 as a
channel material, integrated with Al μ-interdigitated electrodes (μ-IDEs) and HfO 2 as a gate …
channel material, integrated with Al μ-interdigitated electrodes (μ-IDEs) and HfO 2 as a gate …
Asymmetric Junctions in Metallic–Semiconducting–Metallic Heterophase MoS2
D Saha, S Mahapatra - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
Symmetry of the source-channel and drain-channel junction is a unique property of a metal-
oxide-semiconductor field effect transistor (MOSFET), which needs to be preserved while …
oxide-semiconductor field effect transistor (MOSFET), which needs to be preserved while …
Magnitude of the current in 2D interlayer tunneling devices
Using the Bardeen tunneling method with first-principles wave functions, computations are
made of the tunneling current in graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) …
made of the tunneling current in graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) …
Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications
This chapter presents an overview of the rapid progress being made in the development of
two-dimensional (2-D) transition metal dichalcogenide (TMD) materials. The device with …
two-dimensional (2-D) transition metal dichalcogenide (TMD) materials. The device with …