On annealing a boron implanted Si sample at∼ 800° C, boron in the tail of the implanted
profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more …

Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …

Semiconductor industry has increasingly resorted to strain as a means of realizing the
required node-to-node transistor performance improvements. Straining silicon …

In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and
simulate the defect evolution in three different materials. We start by explaining the theory of …

Extended defects are often found after ion implantation and annealing of silicon and they are
known to affect dopant diffusion. The article reviews the structure and energetics of the most …

Oxidation of magnetite (Fe3O4) has broad implications in geochemistry, environmental
science and materials science. Spatially resolving strain fields and defect evolution during …

The controlled doping of germanium by ion implantation is a process which requires basic
research before optimization. For this reason, we have experimentally studied by …

Laser annealing of semiconductor materials is a processing technique offering interesting
application features when intense, transient and localized heat sources are needed for …