A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
Thermodynamically metastable α-, ε-(or κ-), and γ-Ga2O3: From material growth to device applications
M Biswas, H Nishinaka - APL Materials, 2022 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition
Ga 2 O 3 films were deposited on (0001) sapphire substrates by means of pulsed laser
deposition (PLD). The influences of substrate temperature on crystal quality, surface …
deposition (PLD). The influences of substrate temperature on crystal quality, surface …
Epitaxial growth of alpha gallium oxide thin films on sapphire substrates for electronic and optoelectronic devices: Progress and perspective
The demand for high-efficient and robust power semiconductors in harsh environments such
as high temperature and high voltage has been enlarged with the fast development of the …
as high temperature and high voltage has been enlarged with the fast development of the …
Atomic scale mechanism of β to γ phase transformation in gallium oxide
We report the detailed mechanism behind the β to γ phase transformation in Sn-doped and
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …