Study of Effect of coil movement on growth conditions of SiC crystal
S Zhang, H Fu, T Li, G Fan, L Zhao - Materials, 2022 - mdpi.com
SiC substrates have outstanding advantages over traditional materials in power device
application, and are mainly prepared by a physical vapor transport method (PVT). Whether …
application, and are mainly prepared by a physical vapor transport method (PVT). Whether …
Growth of AlN bulk crystals by sublimation sandwich method
EN Mokhov, AD Roenkov, YA Vodakov… - Materials Science …, 2003 - Trans Tech Publ
We report on new results in AlN bulk crystal growth by sublimation sandwich method. The
single crystals of 12 mm in diameter and up to 5 mm long have been obtained with the …
single crystals of 12 mm in diameter and up to 5 mm long have been obtained with the …
Manufacturing of bulk AlN substrates
OV Avdeev, TY Chemekova, H Helava… - Crystal Growth …, 2010 - Wiley Online Library
The unique properties of the group III-nitrides [1, 2] make them the best material for
optoelectronic devices emitting light in the visible and UV spectral ranges, including sources …
optoelectronic devices emitting light in the visible and UV spectral ranges, including sources …
Growth of faceted free-spreading SiC bulk crystals by sublimation
EN Mokhov, MG Ramm, MS Ramm… - Materials Science …, 2003 - Trans Tech Publ
We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where
the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits …
the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits …
Morphological features of sublimation-grown 4H-SiC layers
D Schulz, J Doerschel - Materials Science Forum, 2003 - Trans Tech Publ
Results of growth experiments using 4H-SiC seeds up to 35 mm in diameter are presented.
A special set-up is used in order to initiate the comparison between different numerical …
A special set-up is used in order to initiate the comparison between different numerical …