The past and future of multi-gate field-effect transistors: Process challenges and reliability issues
Y Sun, X Yu, R Zhang, B Chen… - Journal of …, 2021 - iopscience.iop.org
This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process
technologies and compares the device performance and reliability characteristics of the …
technologies and compares the device performance and reliability characteristics of the …
Analytical modeling of transient electromigration stress based on boundary reflections
MA Al Shohel, VA Chhabria… - 2021 IEEE/ACM …, 2021 - ieeexplore.ieee.org
Traditional methods that test for electromigration (EM) failure in multisegment interconnects,
over the lifespan of an IC, are based on the use of the Blech criterion, followed by Black's …
over the lifespan of an IC, are based on the use of the Blech criterion, followed by Black's …
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300° C Local Temperatures
This paper presents the design details and control methodologies for on-chip heaters that
can provide fast and accurate local temperature control for reliability testing applications …
can provide fast and accurate local temperature control for reliability testing applications …
System-level simulation of electromigration in a 3 nm cmos power delivery network: The effect of grid redundancy, metallization stack and standard-cell currents
A physics-based system-level electromigration (EM) modelling platform is employed to
simulate EM and its impact on the IR drop from the supply voltage to the standard-cells for a …
simulate EM and its impact on the IR drop from the supply voltage to the standard-cells for a …
[HTML][HTML] Electromigration in Nano-Interconnects: Determining Reliability Margins in Redundant Mesh Networks Using a Scalable Physical–Statistical Hybrid Paradigm
H Zahedmanesh - Micromachines, 2024 - mdpi.com
This paper presents a hybrid modelling approach that combines physics-based
electromigration modelling (PEM) and statistical methods to evaluate the electromigration …
electromigration modelling (PEM) and statistical methods to evaluate the electromigration …
A Novel System-Level Physics-Based Electromigration Modelling Framework: Application to the Power Delivery Network
Electromigration has been a major reliability concern for nano-interconnects in CMOS
applications. With further CMOS miniaturization, the cross-sectional area of nano …
applications. With further CMOS miniaturization, the cross-sectional area of nano …
A pragmatic network-aware paradigm for system-level electromigration predictions at scale
The standard approach for electro migration (EM) compliance checks of CMOS systems is
based on failure statistics from EM tests on single isolated interconnects. Thus, when …
based on failure statistics from EM tests on single isolated interconnects. Thus, when …
High-Throughput Addressable Test Structure Design for Nano-Scaled CMOS Device Characterization
X Wang, D Wang, L Guo, P Ren… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Device random variations become a critical issue with continuous downscaling, which
require extensive characterization with affordable area and time cost. In this work, a high …
require extensive characterization with affordable area and time cost. In this work, a high …
A 16nm all-digital hardware monitor for evaluating electromigration effects in signal interconnects through bit-error-rate tracking
The impact of Electromigration (EM) on the Bit-Error-Rate (BER) of signal interconnect paths
was experimentally examined. An array-based test-vehicle for tracking Bit-Error-Rate (BER) …
was experimentally examined. An array-based test-vehicle for tracking Bit-Error-Rate (BER) …
Studying the Impact of Temperature Gradient on Electromigration Lifetime Using a Power Grid Test Structure with On-Chip Heaters
This work presents statistical data collected from 38 power grid test structures showing the
detailed impact of temperature gradient on electro migration (EM) lifetime. The failure time …
detailed impact of temperature gradient on electro migration (EM) lifetime. The failure time …