The concept of chemical mechanical planarization (CMP) was invented in IBM in the early
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …

US7071105B2 - Method of polishing a silicon-containing dielectric - Google Patents
US7071105B2 - Method of polishing a silicon-containing dielectric - Google Patents Method of …

A previously developed aqueous cleaning solution (4.2 mol l− 1 each of H 2 O 2 and NH 4
OH) was found to be ineffective in cleaning oxide/nitride surfaces after contamination with …

REFLL CARRIDGE 208 prowerf cArtroc 2010 includes providing a rapid tooling system to a
consumer and providing a cartridge to the consumer. The cartridge has a cartridge body, a …

The effect of hydrogen peroxide in chemical mechanical planarization slurries for shallow
trench isolation was investigated. The various abrasives used in this study were ceria, silica …

(57) ABSTRACT A CMP composition containing a rheology agent, eg, in combination with
oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP …

Amino acids, when used with ceria based slurries, yield high selectivity in shallow trench
isolation chemical mechanical polishing (CMP). However, the presence of impurities in the …

The disclosure is directed to polishing pads with porous pol ishing elements, and to methods
of making and using such pads in a polishing process. In one exemplary embodiment, the …

Polishing pads containing a phase-separated polymer blend, and methods of making and
using Such pads in a polishing process. In one exemplary embodiment, the polishing pads …

US7875091B2 - Rapid tooling system and methods for manufacturing abrasive articles -
Google Patents US7875091B2 - Rapid tooling system and methods for manufacturing abrasive …