Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

The physical and electronic structure of the (100),(010),(001) and (101¯) faces of β-Ga2O3
are addressed using ab initio theory. Restricted Hartree–Fock calculations, with large-core …

Gallium nitride (GaN) has attracted much attention due to its outstanding characteristics. It
may replace conventional semiconductor materials, such as silicon, that are approaching …

Initial oxidation of gallium nitride (GaN)(0001) epilayers and subsequent growth of thermal
oxides in dry oxygen ambient were investigated by means of x-ray photoelectron …

Plasma-based atom-selective etching (PASE) of GaN is conducted to realize the highly
efficient planarization of the GaN surface. Inductively coupled plasma with high temperature …

We have deposited gallium oxide (Ga2O3) films on Si (100) substrates by metal organic
chemical vapor deposition (MOCVD), by a reaction of a trimethylgallium (TMGa) and oxygen …

We have prepared the gallium oxide (Ga2O3) thin films on sapphire substrates by the metal
organic chemical vapor deposition (MOCVD) technique. We have compared the two films …

Sapphire and gallium oxide have been used as substrates for most of the reported results on
β-Ga 2 O 3 devices. However, silicon (Si) is an abundant material on the Earth, leading to …

Conventionally thermal oxidation of GaN is performed in either dry or wet oxygen ambient. In
this work thermal oxidation in water vapor ambient, together with the two above mentioned …

Schottky barrier diodes (SBDs) have been fabricated laterally on a β-Ga 2 O 3 film grown on
both p-type and n-type Si (100) substrates using a pulsed laser deposition technique. The …