Challenges and opportunities in advanced Ge pMOSFETs

E Simoen, J Mitard, G Hellings, G Eneman… - Materials Science in …, 2012 - Elsevier
This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …

On the diffusion and activation of n-type dopants in Ge

J Vanhellemont, E Simoen - Materials Science in Semiconductor …, 2012 - Elsevier
Diffusion and activation of n-type dopants in Ge are discussed with particular emphasis on
shallow junction formation. It is shown that both the increase of dopant diffusivity and the …

[HTML][HTML] Berberine protects against 6-OHDA-induced neurotoxicity in PC12 cells and zebrafish through hormetic mechanisms involving PI3K/AKT/Bcl-2 and Nrf2/HO-1 …

C Zhang, C Li, S Chen, Z Li, X Jia, K Wang, J Bao… - Redox biology, 2017 - Elsevier
Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications

L Virot, L Vivien, JM Fédéli, Y Bogumilowicz… - Photonics …, 2013 - opg.optica.org
This paper reports on high-performance waveguide-integrated germanium photodiodes for
optical communications applications. 200 mm wafers and production tools were used to …

[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals

G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Advances in ion beam modification of semiconductors

RG Elliman, JS Williams - Current Opinion in Solid State and Materials …, 2015 - Elsevier
This review provides an overview of the current status of ion-implantation research in silicon,
germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon …

Stability, bonding, and electronic properties of silicon and germanium arsenides

P Wu, M Huang - physica status solidi (b), 2016 - Wiley Online Library
First‐principles calculations were carried out to study the stability, structural, and electronic
properties of compounds of silicon arsenides (SiAs and SiAs2) and germanium arsenides …

properties of intrinsic point defects in Si and Ge assessed by density functional theory

K Sueoka, E Kamiyama, P Śpiewak… - ECS Journal of Solid …, 2016 - iopscience.iop.org
During the last decade, considerable progress has been made in understanding the
properties and behavior of the vacancy V and self-interstitial I in silicon (Si) and germanium …

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

S Prucnal, Y Berencén, M Wang… - Semiconductor …, 2018 - iopscience.iop.org
Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-
semiconductor technology would require the fabrication of p-and n-type doped regions for …

Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction

O Camara, MA Tunes, G Greaves, AH Mir, S Donnelly… - Ultramicroscopy, 2019 - Elsevier
In this work, ion irradiations in-situ of a transmission electron microscope are performed on
single-crystal germanium specimens with either xenon, krypton, argon, neon or helium …