Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received
great attention due to its unique properties. Because of low cost, absence of toxicity, and …

Research groups around the world are investigating tin (II) monosulfide (SnS) via various
deposition methods and heterostructures for thin film solar cells. The maximum achieved …

Tin sulfide is being widely investigated as an earth-abundant light harvesting material, but
recorded efficiencies for SnS fall far below theoretical limits. We describe the synthesis and …

SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar
cells were made by vapor deposition of p-type tin (II) sulfide, SnS, and n-type zinc oxysulfide …

SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and
experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an …

The demand for low-cost and scalable renewable energy continues to spur research in thin-
film photovoltaics (PV), in particular those with chalcogenide semiconductor absorbers …

Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic
properties, and there is difficulty in identifying separate phases, which are also known to …

Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor
layers in a closed chamber. The effect of sulphurization temperature (T s) that varied in the …

SnS thin films with different thicknesses have been deposited on glass substrates at a
substrate temperature of 300° C. The influence of thickness on structural, morphological …

New types of thin film solar cells made from earth-abundant, non-toxic materials and with
adequate physical properties such as band-gap energy, large absorption coefficient and p …