Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

LMK Vandersypen, H Bluhm, JS Clarke… - npj Quantum …, 2017 - nature.com
Semiconductor spins are one of the few qubit realizations that remain a serious candidate
for the implementation of large-scale quantum circuits. Excellent scalability is often argued …

Recent advances in hole-spin qubits

Y Fang, P Philippopoulos, D Culcer… - Materials for …, 2023 - iopscience.iop.org
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a
rapid pace. We first review the main potential advantages of these hole-spin qubits with …

Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET

B Voisin, R Maurand, S Barraud, M Vinet, X Jehl… - Nano …, 2016 - ACS Publications
Hole spins in silicon represent a promising yet barely explored direction for solid-state
quantum computation, possibly combining long spin coherence, resulting from a reduced …

Pauli spin blockade of heavy holes in a silicon double quantum dot

R Li, FE Hudson, AS Dzurak, AR Hamilton - Nano letters, 2015 - ACS Publications
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based
double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map …

Electrical control of the tensor of the first hole in a silicon MOS quantum dot

SD Liles, F Martins, DS Miserev, AA Kiselev… - Physical Review B, 2021 - APS
Single holes confined in semiconductor quantum dots are a promising platform for spin-qubit
technology, due to the electrical tunability of the g factor of holes. However, the underlying …

Spin-orbit interactions in inversion-asymmetric two-dimensional hole systems: A variational analysis

E Marcellina, AR Hamilton, R Winkler, D Culcer - Physical Review B, 2017 - APS
We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-
asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on …

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

SD Liles, R Li, CH Yang, FE Hudson… - Nature …, 2018 - nature.com
Valence band holes confined in silicon quantum dots are attracting significant attention for
use as spin qubits. However, experimental studies of single-hole spins have been hindered …

Ambipolar quantum dots in undoped silicon fin field-effect transistors

AV Kuhlmann, V Deshpande, LC Camenzind… - Applied Physics …, 2018 - pubs.aip.org
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively
standard complementary metal-oxide-semiconductor fabrication techniques. We realize …

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

D Rotta, F Sebastiano, E Charbon, E Prati - npj Quantum Information, 2017 - nature.com
Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a
considerable number of qubits of the order of 106, while more complex molecules such as …

Probing the spin states of a single acceptor atom

J Van der Heijden, J Salfi, JA Mol, J Verduijn… - Nano …, 2014 - ACS Publications
We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a
silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a …