Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array
To apply resistive random‐access memory (RRAM) to the neuromorphic system and
improve performance, each cell in the array should be able to operate independently by …
improve performance, each cell in the array should be able to operate independently by …
Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor
Through oxygen profile engineering, we fabricated W/AlO x/Al 2 O 3/Pt bilayer memristors
with a 250-nm feature size. The AlOX fabricated by sputtering serves as an oxygen vacancy …
with a 250-nm feature size. The AlOX fabricated by sputtering serves as an oxygen vacancy …
Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics
Transition metal carbides, called MXenes, can be used for MXene‐based unique electronic
devices such as new types of batteries, energy storage devices, and supercapacitors, where …
devices such as new types of batteries, energy storage devices, and supercapacitors, where …
Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
The improved resistive switching (RS) characteristics of Pt/HfO 2/Ti structured RRAM are
demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma …
demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma …
[HTML][HTML] Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
In this study, a bilayer HfO 2/ZrO 2 thin film structure was deposited by radio frequency
sputtering at room temperature (RT) to investigate the resistive switching (RS) …
sputtering at room temperature (RT) to investigate the resistive switching (RS) …
Neuromorphic vision sensor driven by ferroelectric HfAlO
The rapid progress in bioinspired machine vision supported by intelligent computing has
attracted attention of the modern electronics due to their wide applications in image …
attracted attention of the modern electronics due to their wide applications in image …
Study of in situ silver migration in amorphous boron nitride CBRAM device
We report the dependence of the thickness of amorphous boron nitride (a-BN) on the
characteristics of conductive bridge random access memory (CBRAM) structured with the …
characteristics of conductive bridge random access memory (CBRAM) structured with the …
Optical Lithography Patterning of SiO2 Layers for Interface Passivation of Thin Film Solar Cells
Ultrathin Cu (In, Ga) Se2 solar cells are a promising way to reduce costs and to increase the
electrical performance of thin film solar cells. An optical lithography process that can …
electrical performance of thin film solar cells. An optical lithography process that can …