A landscape of β-Ga2O3 Schottky power diodes
MH Wong - Journal of Semiconductors, 2023 - iopscience.iop.org
Abstract β-Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and
development for power electronic applications. This paper reviews state-of-the-art β-Ga 2 O …
development for power electronic applications. This paper reviews state-of-the-art β-Ga 2 O …
10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C
This work demonstrates a lateral Ga2O3 Schottky barrier diode (SBD) with a breakdown
voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD …
voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD …
Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices
Multidimensional power devices can achieve performance beyond conventional limits by
deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in …
deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in …
N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded pn junction by a one-step integrated approach
C Liu, Z Wu, H Zhai, J Hoo, S Guo, J Wan… - Journal of Materials …, 2025 - Elsevier
The pn junction is the foundation building structure for manufacturing various electronic and
optoelectronic devices. Ultrawide bandgap semiconductors are expected to overcome the …
optoelectronic devices. Ultrawide bandgap semiconductors are expected to overcome the …
The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical Rectifiers
Ga2O3 heterojunction rectifiers have emerged as a novel candidate for various power
conversion applications by using NiO as the solution on the p-type side. In this work, the …
conversion applications by using NiO as the solution on the p-type side. In this work, the …
β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as
an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a …
an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a …
Post-growth annealing effect of Li-doped NiO thin films grown by mist chemical vapor deposition
Nickel oxide (NiO) thin films were grown by mist chemical vapor deposition (mist CVD) with
various amounts of Li dopant in the precursor (0–15%). As the Li dopant readily …
various amounts of Li dopant in the precursor (0–15%). As the Li dopant readily …
Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers
The stability of vertical geometry NiO/Ga2O3 rectifiers during two types of annealing were
examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal …
examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal …
(Ultra-) wide-bandgap heterogeneous superjunction: Design, performance limit, and experimental demonstration
Superjunction (SJ) breaks the performance limit of conventional power devices via
multidimensional electrostatic engineering. Following a commercial success in Si, it has …
multidimensional electrostatic engineering. Following a commercial success in Si, it has …
NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
This work investigates the blocking electric field, capacitance, and switching speed of the p-
type NiO based junction termination extension (JTE) for vertical Ga 2 O 3 devices. The JTE …
type NiO based junction termination extension (JTE) for vertical Ga 2 O 3 devices. The JTE …