Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …

This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …

Abstract Silicon (Si) nanosheet (NS) metal-oxide semiconductor field effect transistors
(MOSFETs) are realized as an outstanding structure to obtain better area scaling and power …

Quantum electronics has significantly evolved over the last decades. Where initially the clear
focus was on light–matter interactions, nowadays approaches based on the electron's wave …

The rising temperature due to a self-heating or thermal environment not only degrades the
subthreshold performance but also intensifies thermal stress, posing a severe challenge to …

Based on a self-consistent Schrödinger-Poisson solver and top-of-the-barrier model, a
quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The …

This article presents the construction and analysis of a hybrid numerical method for the
discretization of the convection-dominated nonlinear carrier transport process in …

Abstract Circular Double Gate Transistors (CDGTs) are one of the alternative promising
devices to overcome short-channel effects (SCEs) with improved electrostatic control by two …

The low-field hole mobility in p-type inversion-mode silicon (Si) and germanium (Ge)
nanosheet (NS) transistors is rigorously calculated by a physics-based theoretical model …

In this work, a finite element method (FEM)-based numerical framework is proposed to
effectively calculate the drift-diffusion equations and compiled into a parallel computing …