In this work, we present for the first time, a highly scalable general high voltage MOSFET
model, which can be used for any high voltage MOSFET with extended drift region. This …

Advances in high breakdown voltage SiC MOSFETs allows design of medium voltage power
modules with simpler topologies, however, high dv/dt in addition to high di/dt makes …

This paper reports on the detailed analysis and modeling of lateral nonuniform doping
present in intrinsic MOS channel of high-voltage (HV) MOSFETs, eg, vertical (VDMOS) and …

This paper develops a physics-based compact model of shield gate trench (SGT) MOSFET,
including a drift region current, an analytical intrinsic drain potential and a charge on the …

A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is
proposed by applying workfunction engineering to a vertical power metal–oxide …

The accurate compact modeling of High Voltage (HV) MOS transistors has always been a
great challenge in the device modeling community. This is due to the fact that the charges …

A novel model of the high-voltage vertical double diffused MOS (VDMOS) for the circuit
simulation has been presented in this paper. In the DC section of the model, the VDMOS is …

In this paper, two accurate power MOSFET models including quasi-saturation effect are
presented. These models have no internal node voltages determined by the circuit simulator …

The lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is
the building block of many categories of high voltage MOSFETs eg LDMOS, VDMOS. Here …

Abstract Smart Power ICs are Power Switches with integrated control and protection
functions. In order to meet the electromagnetic compatibility requirements, the output …