In this review article a comprehensive analysis of the developments in ultraviolet (UV)
detector technology is described. At the beginning, the classification of UV detectors and …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Wide bandgap GaN has long been sought for its applications to blue and UV emitters and
high temperature/high power electronic devices. Recent introduction of commercial blue and …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

In this paper, we review the metal–GaN contact technology to shed light on some of the
critical issues such as GaN surface cleaning for metallization, Schottky barrier formation to …

This article reviews the effects of radiation damage on GaN materials and devices such as
light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma …

A review of the effectsof proton, neutron, γ-ray, and electron irradiation on GaN materials
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …

Transient capacitance methods were used to analyze traps occurring in unintentionally
doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient …