This article discusses key elementary surface-reaction processes in state-of-the-art plasma
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …

As semiconductor device structures continue to approach the nanometer size range, new
challenges in the fabrication of such devices have arisen. For example, the need for high …

Molecular dynamics simulations were performed to demonstrate nanometer-scale silicon (⁠
Si⁠) trench etching with silicon dioxide (⁠ SiO 2⁠) hard masks by chlorine (⁠ Cl+⁠) ion …

Thermal atomic layer etching (ALE) of nickel (Ni) may be performed with a step of thin-layer
oxidation of its surface and another step of its removal by gas-phase …

Controlling thickness and morphology of transition-metal thin films used in magnetic random-
access memory fabrication is a major challenge. Thermal dry etching has emerged as a …

A series of benzilimidazole-based donor–π–acceptor (D–π–A) blue fluorophores,
functionalized at the N1 position of the imidazole ring are designed and synthesized. In …

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …

Atomic layer etching is an advanced plasma etching technique that enables the atomic-
precision control. In this study, the effects of surface conditions on the stability of the etched …

In thermal atomic layer etching (ALE) of Ni, a thin oxidized Ni layer is removed by a
hexafluoroacetylacetone (hfacH) etchant gas at an elevated surface temperature, and …

Plasma-thermal atomic layer etching is a promising technique to enable selective and
directional etching on metals. It involves a plasma activation step and a thermal step where …