Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing

Z Xiao, VB Naik, JH Lim, Y Hou, Z Wang, Q Shao - Science Advances, 2024 - science.org
Memristors have emerged as promising devices for enabling efficient multiply-accumulate
(MAC) operations in crossbar arrays, crucial for analog in-memory computing (AiMC) …

Spintronic memristors for computing

Q Shao, Z Wang, Y Zhou, S Fukami, D Querlioz… - arXiv preprint arXiv …, 2021 - arxiv.org
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and
cognitive algorithms. Traditional digital computer systems have separate logic and memory …

Restricted Boltzmann Machines Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

X Li, C Wan, R Zhang, M Zhao, S Xiong, D Kong… - Nano Letters, 2024 - ACS Publications
Artificial intelligence has surged forward with the advent of generative models, which rely
heavily on stochastic computing architectures enhanced by true random number generators …

Experimental demonstration of a robust training method for strongly defective neuromorphic hardware

WA Borders, A Madhavan, MW Daniels… - arXiv preprint arXiv …, 2023 - arxiv.org
The increasing scale of neural networks needed to support more complex applications has
led to an increasing requirement for area-and energy-efficient hardware. One route to …

Closed Loop Superparamagnetic Tunnel Junctions for Reliable True Randomness and Generative Artificial Intelligence

D Koh, Q Wang, BC McGoldrick, CT Chou, L Liu… - arXiv preprint arXiv …, 2024 - arxiv.org
Physical devices exhibiting stochastic functions with low energy consumption and high
device density have the potential to enable complex probability-based computing …

Area and Energy Efficient Short-Circuit-Logic-Based STT-MRAM Crossbar Array for Binary Neural Networks

C Wang, Z Wang, Z Zhang, Y Zhang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) is a promising
candidate for future memory systems, however, implementing highly parallel neuro-inspired …

Big-computing and Little-storing STT-MRAM PIM architecture with Charge Domain based MAC operation

Y Jang, D Kim, Y Kim, J Park - IEEE Transactions on Computers, 2024 - ieeexplore.ieee.org
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising memory
technology for processing in memory (PIM) thanks to its high endurance and relatively low …

Accuracy Improvement with Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-In-Memory

X Wang, N Wei, S Gao, W Wu… - IEEE Journal on …, 2024 - ieeexplore.ieee.org
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque
magnetic random access memory (STT-MRAM) and 28-nm CMOS technology. The adopted …