Epitaxy provides readers with a comprehensive treatment of the modern models and
modifications of epitaxy, together with the relevant experimental and technological …

Solar energy conversion and photoinduced bioactive sensors are representing topical
scientific fields, where interfaces play a decisive role for efficient applications. The key to …

Using compositionally graded buffers, we demonstrate InP on GaAs suitable for minority
carrier devices, exhibiting a threading dislocation density of 1.2× 10 6∕ cm 2 determined by …

Lattice matched n-type AlInP (100) charge selective contacts are commonly grown on np
GaInP (100) top absorbers in high-efficiency III–V multijunction solar or …

Multiabsorber structures for photoelectrochemical devices based on III–V semiconductor
compounds enable direct solar-to-fuel conversion with the highest efficiencies to date as …

Using scanning tunneling microscopy, we have observed changes of the dimer
configurations at the well-defined, atomically ordered P-rich GaP (100) and InP (100) …

The surface optical anisotropy of AlInP (001) surfaces is studied from both experiment and
theory. The comparison of the data measured on epitaxially grown Al 0.52 In 0.48 P (001) …

Red-emitting ridge waveguide lasers with integrated tenth order surface distributed Bragg
reflector gratings were developed. The grating was implemented by the use of a BCl_3-Ar …

We present a metal organic chemical vapor deposition (MOCVD) growth study of
unconventional alloys of InGaP (with In fraction of 0.2–0.4) grown on fully relaxed GaAsP …

GaAs-based laser diodes emitting in the red spectral region have challenging material and
thermal properties when reducing the emission wavelength towards the physical limit …