Black silicon photovoltaics
This article presents an overview of the fabrication methods of black silicon, their resulting
morphologies, and a quantitative comparison of their optoelectronic properties. To perform …
morphologies, and a quantitative comparison of their optoelectronic properties. To perform …
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE …
HV Jansen, MJ De Boer, S Unnikrishnan… - Journal of …, 2009 - iopscience.iop.org
An intensive study has been performed to understand and tune deep reactive ion etch
(DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and …
(DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and …
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile …
Very deep trenches (up to 200 mu m) with high aspect ratios (up to 10) in silicon and
polymers are etched using a fluorine-based plasma (SF 6/O 2/CHF 3). Isotropic, positively …
polymers are etched using a fluorine-based plasma (SF 6/O 2/CHF 3). Isotropic, positively …
Plasma ionization by helicon waves
FF Chen - Plasma Physics and Controlled Fusion, 1991 - iopscience.iop.org
The dispersion relation for helicon waves in a uniform, bounded plasma is derived with both
collisional and Landau damping. It is shown that the latter can explain the very high …
collisional and Landau damping. It is shown that the latter can explain the very high …
RF compensated probes for high-density discharges
ID Sudit, FF Chen - Plasma Sources Science and Technology, 1994 - iopscience.iop.org
A Langmuir probe for the study of high-density RF discharges has been developed and
tested in a helicon discharge in which the RF potential (approximately= 100 V) is much …
tested in a helicon discharge in which the RF potential (approximately= 100 V) is much …
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies
R Dussart, T Tillocher, P Lefaucheux… - Journal of Physics D …, 2014 - iopscience.iop.org
The evolution of silicon cryoetching is reported in this topical review, from its very first
introduction by a Japanese team to today's advanced technologies. The main advances in …
introduction by a Japanese team to today's advanced technologies. The main advances in …
[图书][B] High density plasma sources: design, physics and performance
OA Popov - 1996 - books.google.com
This book describes the design, physics, and performance of high density plasma sources
which have been extensively explored in low pressure plasma processing, such as plasma …
which have been extensively explored in low pressure plasma processing, such as plasma …
A review of SiC reactive ion etching in fluorinated plasmas
PH Yih, V Saxena, AJ Steckl - physica status solidi (b), 1997 - Wiley Online Library
Research and development in semiconducting silicon carbide (SiC) technology has
produced significant progress in the past five years in many areas: material (bulk and thin …
produced significant progress in the past five years in many areas: material (bulk and thin …
[图书][B] Ионно-плазменные процессы в тонкопленочной технологии
ЕВ Берлин, ЛА Сейдман - 2010 - elibrary.ru
Настоящая книга представляет собой подробное справочное руководство по основным
вакуумным плазмохимическим процессам в тонкопленочной технологии-реактивному …
вакуумным плазмохимическим процессам в тонкопленочной технологии-реактивному …
Industrial applications of low‐temperature plasma physics
FF Chen - Physics of Plasmas, 1995 - pubs.aip.org
The application of plasma physics to the manufacturing and processing of materials may be
the new frontier of our discipline. Already partially ionized discharges are used in industry …
the new frontier of our discipline. Already partially ionized discharges are used in industry …