The exciton binding energy (Eb) is a key parameter that governs the physics of many
optoelectronic devices. At their best, trustworthy and precise measurements of Eb challenge …

The discovery of single-atomic layer graphene [1] has led to a surge of interest in other
anisotropic crystals with strong inplane bonds and weak, van der Waals-like, inter-layer …

The family of two-dimensional materials has been expanding rapidly over the last few years.
Within it, a special place is occupied by silicene, germanene, and stanene due to their …

We present a tight-binding (TB) model and k· p theory for electrons in monolayer and few-
layer InSe. The model is constructed from a basis of all s and p valence orbitals on both …

Nanostructuring is an extremely promising path to high-performance thermoelectrics.
Favorable improvements in thermal conductivity are attainable in many material systems …

Because of the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-
dependent band gap, spanning the visible and near infrared regions, and thus recently has …

Few-layer InSe draws tremendous research interests owing to the superior electronic and
optical properties. It exhibits a high carrier mobility up to more than 1000 cm 2/Vs at room …

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior
electrical and optical properties as a direct-band-gap semiconductor with high mobility from …

Using first-principles calculations, we show that the recently synthesized two-dimensional
(2D) van der Waals layered material indium selenide (InSe) nanosheets can serve as a …

This paper reports on the pressure dependence of the absorption edge of indium selenide
and In 1− x Ga x Se alloys (x< 0.2) up to the pressure at which precursor effects of the phase …