GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys
is reviewed including exciting recent results. Attention is paid to the crystal growth …

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐
emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active …

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …

Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer
on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch …

The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …