Disclosed according to one embodiment is a light-emitting element comprising: a light-
emitting structure comprising a first semiconductor layer, an active layer, and a second …

Disclosed according to one embodiment is a light-emitting element comprising: a light-
emitting structure comprising a first semiconductor layer, an active layer, and a second …

XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2, 5-dioxopyrrol-1-yl) phenyl] methyl] phenyl]
pyrrole-2, 5-dione Chemical compound O= C1C= CC (= O) N1C (C= C1)= CC= C1CC1 …

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride
layer orderly. The nucle ation layer consists of regions in a thickness direction, wherein a …

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

(57) ABSTRACT A semiconductor light-emitting device includes a buffer structure, a first-type
semiconductor layer on the buffer structure, an active layer on the first-type semiconductor …

A semiconductor substrate is provided in the present disclosure. The semiconductor
substrate includes a first semiconductor layer and a second semiconductor layer on the first …

A method for manufacturing a compound semiconductor substrate comprises: a step to form
an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low …

(57) ABSTRACT A compound semiconductor substrate having a desired qual ity is provided.
A compound semiconductor substrate has an SiC (silicon carbide) layer, an AIN (aluminum …