A capacitorless one-transistor dynamic random access memory (1T DRAM) based on multi-
source hetero-junction tunnel field-effect transistor (TFET) is presented in this work. The …

This paper reports on the usefulness of shell-doped (SD) junctionless (JL) transistor
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …

In this paper, we have proposed a dopingless 1T DRAM (DL-DRAM) that utilizes the charge
plasma concept. The proposed device employs a misaligned double-gate architecture to …

In this paper, a dopingless DRAM based on work function engineered Tunnel field effect
transistor is proposed. Gate metal workfunction engineering is done to enhance ON/OFF …

This work examines the device behavior of ferroelectric dual material gate all around tunnel
field effect transistor (FE-DMGAA-TFET). The ferroelectric material manifests the negative …

Analytical models are presented for a negative capacitance double-gate tunnel field-effect
transistor (NC DG TFET) with a ferroelectric gate dielectric in this paper. The model …

A key indicator of multi-functional attributes of a transistor is technological competiveness vis-
à-vis existing architectures. Apart from the well-known logic circuit implementation through …

Here, an explicit analytical model of electrical properties like channel potential, electric field,
drain current, and threshold voltage for a negative capacitance DGTFET structure is …

In this paper, we propose a IT DRAM with an electrostatic barrier to improve the retention
time of the device. The proposed device utilizes a misaligned double-gate to store holes and …

Semiconductor devices are fundamental components of the electronic industry. Due to many
limitations, like sub threshold swing, low switching time, and a low I on/I off ratio, MOSFETs …