Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 …

K Toprasertpong, K Tahara, Y Hikosaka… - … Applied Materials & …, 2022 - ACS Publications
The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …

The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances

R Han, P Hong, S Ning, Q Xu, M Bai, J Zhou… - Journal of Applied …, 2023 - pubs.aip.org
HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …

Wake-up-free properties and high fatigue resistance of HfxZr1− xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget …

T Onaya, T Nabatame, M Inoue, T Sawada, H Ota… - APL Materials, 2022 - pubs.aip.org
The discovery of ferroelectricity in HfO2-based thin films in 2011 1, 2 introduced the
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …

Interfacial layer engineering in sub-5-nm HZO: Enabling low-temperature process, low-voltage operation, and high robustness

E Yu, X Lyu, M Si, DY Peide… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
For low-voltage reliable operation of ferroelectric devices, the scaling of Hf ZrxO2 (HZO)
thickness () is important. Despite the importance of scaling, ferroelectricity degradation and …

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

X Wang, T Mikolajick, M Grube - ACS Applied Electronic Materials, 2022 - ACS Publications
The back-end-of-line (BEOL) processing compatibility of sputtered ferroelectric hafnium
zirconium oxide (HZO) thin films is demonstrated on sputtered TiN/HZO/TiN thin-film …

Ferroelectric Enhancement in a TiN/Hf1–xZrxO2/W Device with Controlled Oxidation of the Bottom Electrode

SP Chiniwar, YC Hsieh, CH Shih… - ACS Applied …, 2024 - ACS Publications
Hf1–x Z x O2 (HZO) is a promising ferroelectric (FE) material with CMOS compatibility, while
the TiN/HZO/W metal-ferroelectric-metal structure provides balanced thermal expansion for …

Toward low-thermal-budget Hafnia-based ferroelectrics via atomic layer deposition

JH Kim, T Onaya, HR Park, YC Jung… - ACS Applied …, 2023 - ACS Publications
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant
attention has been devoted to studying hafnia-based ferroelectric material systems due to …

Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Z Wang, Z Guan, H Wang, X Zhou, J Li… - … Applied Materials & …, 2024 - ACS Publications
The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the
information storage and processing performances of ferroelectric ZrO2-based nonvolatile …

Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant

YC Jung, JH Kim, H Hernandez-Arriaga… - Applied Physics …, 2022 - pubs.aip.org
In this Letter, the robust ferroelectric properties of low-temperature (350 C) Hf 0.5 Zr 0.5 O 2
(HZO) films are investigated. We demonstrate that the lower crystallization temperature of …

[HTML][HTML] As-deposited ferroelectric HZO on a III–V semiconductor

A Andersen, AEO Persson, LE Wernersson - Applied Physics Letters, 2022 - pubs.aip.org
By electrical characterization of thin films deposited by atomic layer deposition, Hf x Zr 1− x
O 2 (HZO) is shown to be ferroelectric as-deposited, ie, without any annealing step, using a …