Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes
K Sasikumar, R Bharathikannan, M Raja… - Superlattices and …, 2020 - Elsevier
The 8 wt% rare earth (RE= Ce, Gd, and Y) doped zirconium dioxide (ZrO 2) thin films were
prepared on glass substrates by spin-coating technique and annealed at 600° C. Also, the …
prepared on glass substrates by spin-coating technique and annealed at 600° C. Also, the …
Rapid thermal annealing influences on microstructure and electrical properties of Mo/ZrO2/n-Si/Al MISM junction with a high-k ZrO2 insulating layer
The microstructural, chemical and electrical properties of Mo/ZrO 2/n-Si/Al metal/insulator/
semiconductor/metal (MISM) heterostructure with zirconium oxide (ZrO 2) as an insulating …
semiconductor/metal (MISM) heterostructure with zirconium oxide (ZrO 2) as an insulating …
Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …
Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Growth of 150 nm Sm 2 O 3 films by sputtered pure samarium metal film on silicon
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations
Rare earth oxides have shown great promise in a variety of applications in their own right,
and as the building blocks of complex oxides. A great deal of recent interest has been …
and as the building blocks of complex oxides. A great deal of recent interest has been …
Investigations on structural, morphological and UV light detection characteristics in p-ZrO2/n-Si Heterostructure based devices
The development of hetero-structured based UV photodiode is a rapidly growing interest in
the area of optoelectronic applications. In recent years, one of the next generation …
the area of optoelectronic applications. In recent years, one of the next generation …
Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate
The morphology, topography, and electrical properties of sputtered pure samarium metal
film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures …
film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures …
Enhanced structural properties of In2O3 nanoparticles at lower calcination temperature synthesised by co‐precipitation method
Indium oxide nanoparticles (In2O3 NPs) were formed by calcining the optimised as‐
prepared indium hydroxide (In (OH) 3) NPs. The as‐prepared In (OH) 3 NPs were …
prepared indium hydroxide (In (OH) 3) NPs. The as‐prepared In (OH) 3 NPs were …
The mechanism of phase transition induced by oxygen doping in zirconium nitride thin films
Abstract MO x N y (M represents transition metal) thin films have shown excellent
performance in various fields such as temperature sensing, high-k gate dielectrics and …
performance in various fields such as temperature sensing, high-k gate dielectrics and …
Samarium oxide and samarium oxynitride thin film gate oxides on silicon substrate/Goh Kian Heng
KH Goh - 2017 - studentsrepo.um.edu.my
Sputtered pure samarium (Sm) metal films on silicon substrates were thermally oxidized and
oxynitrided at various temperatures (600–900° C) and durations (5–20 min). Effects of …
oxynitrided at various temperatures (600–900° C) and durations (5–20 min). Effects of …