Recent advances in manganese-based materials for electrolytic water splitting
J Hu, Y Zhou, Y Liu, Z Xu, H Li - International Journal of Molecular …, 2023 - mdpi.com
Developing earth-abundant and highly effective electrocatalysts for electrocatalytic water
splitting is a prerequisite for the upcoming hydrogen energy society. Recently, manganese …
splitting is a prerequisite for the upcoming hydrogen energy society. Recently, manganese …
Discovery of a layered multiferroic compound Cu1−xMn1+ySiTe3 with strong magnetoelectric coupling
Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic
memory and spin transistor applications. Here, we report a multiferroic chalcogenide …
memory and spin transistor applications. Here, we report a multiferroic chalcogenide …
Colossal Density-Driven Resistance Response in the Negative Charge Transfer Insulator
A reversible density driven insulator to metal to insulator transition in high-spin MnS 2 is
experimentally observed, leading with a colossal electrical resistance drop of 10 8 Ω by 12 …
experimentally observed, leading with a colossal electrical resistance drop of 10 8 Ω by 12 …
Variation of magnetism in two-dimensional MnS2 thin films
D Chen, CL Wang, JJ Li, FF Liu - Journal of Magnetism and Magnetic …, 2022 - Elsevier
Atomically thin layers with variable magnetism are highly desirable for next-generation data
storage and spintronic devices. Variations of magnetism in two-dimensional (2D) materials …
storage and spintronic devices. Variations of magnetism in two-dimensional (2D) materials …
Antiferromagnetic topological metal near the metal-insulator transition in
Antiferromagnetic (AFM) semiconductor MnS 2 possesses both high-spin and low-spin
magnetic phases that can be reversibly switched by applying pressure. With increasing …
magnetic phases that can be reversibly switched by applying pressure. With increasing …
Republished: Colossal density-driven resistance response in the negative charge transfer insulator
The Mn chalcogenides show a remarkable variation in structural and physical properties
with density. In MnS 2 we observe a pronounced difference with the effects of varying …
with density. In MnS 2 we observe a pronounced difference with the effects of varying …
Absence of metallic ground state across the spin state transition in crystalline under pressure
J Zhou, W Zhong, H Zhang, S Kawaguchi… - Physical Review B, 2024 - APS
The transition metal disulfide MnS 2 undergoes a structural phase transition at
approximately 14 GPa attributed to a spin state transition. Nonetheless, the electronic …
approximately 14 GPa attributed to a spin state transition. Nonetheless, the electronic …
[HTML][HTML] CO2 laser heating system for in situ radial x-ray absorption at 16-BM-D at the Advanced Photon Source
We present a portable CO 2 laser heating system for in situ x-ray absorption spectroscopy
(XAS) studies at 16-BM-D (High Pressure Collaborative Access Team, Advanced Photon …
(XAS) studies at 16-BM-D (High Pressure Collaborative Access Team, Advanced Photon …
Probing disorder in high-pressure cubic tin (IV) oxide: a combined X-ray diffraction and absorption study
The transparent conducting oxide, SnO2, is a promising optoelectronic material with
predicted tailorable properties via pressure-mediated band gap opening. While such …
predicted tailorable properties via pressure-mediated band gap opening. While such …
Antiferromagnetic topological metal near the metal-insulator transition in MnS
Antiferromagnetic (AFM) semiconductor MnS $ _2 $ possesses both high-spin and low-spin
magnetic phases that can be reversibly switched by applying pressure. With increasing …
magnetic phases that can be reversibly switched by applying pressure. With increasing …