Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning
integrated circuits and reaching sub-10-nm resolution within the next decade. Should …

All nanofabrication methods come with an intrinsic resolution limit, set by their governing
physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography …

We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These
cage molecules were already known to function as a negative tone photoresist for EUV …

Extreme ultraviolet (EUV) lithography with 13.5 nm wavelength is the main option for sub-
10nm patterning in the semiconductor industry. We report improvements in resist …

Background: Hybrid inorganic-organic materials have emerged as promising candidates for
EUV resists. However, knowledge on their stability when deposited as thin films is essential …

Computers and other electronic devices are an integral and ubiquitous part of the modern
world. One of the key drivers for the development, power, cost, and availability of these …

This paper introduces the recent progress in methodologies and their related applications
based on the soft x-ray interference lithography beamline in the Shanghai synchrotron …

The development of new resist materials is vital for fabrication techniques for next-
generation microelectronics. A class of photosensitizer compositions with reactivity …

Synchrotron light sources can provide the required spatial coherence, stability and control to
support the development of advanced lithography at the extreme ultraviolet and soft X-ray …

Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a
viable candidate for next generation lithography1, which drives the need for EUV resists …