Abstract The inhibitor-dependent poly (3, 4-ethylenedioxythiophene)(PEDOT) fabrication
suffers major problems in the areas of controllability and film thickness. In this work, we …

Continuous requirement for the improvement of chip performance caused an increasing
attention on the copper polishing precision. To predict the copper removal rate, it is critical to …

Ruthenium (Ru) has been selected as the next-generation barrier material for copper (Cu)
interconnects due to its excellent electrical properties, high breakdown voltage, low leakage …

Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough
surface by combining several functions of tribology (friction, lubrication), chemistry, and …

Ruthenium (Ru) has the advantages of low resistivity, high thermal stability, and good
adhesion and wettability, making it an important solution for breaking through the 14 nm …

Chemical mechanical planarization (CMP) is a key processing step in the fabrication of
copper interconnects. The present work focuses on certain electroanalytical aspects of …

Copper chemical mechanical polishing (Cu CMP) is a critical process in the fabrication of
high performance microprocessors and other advanced memory devices. It was …

In the present work, Ru as well as Cu chemical mechanical planarization (CMP) with slurry
containing fumed silica as abrasive and sodium hypochlorite as oxidizer was investigated …

Cu dishing and dielectric erosion are usually generated at different pattern densities and
line widths as a result of mechanical and chemical effects from slurry during the copper …

Mn-based (referred to simply as Mn in the following) barrier/Ru liner stack has been
proposed to replace TaN/Ta barrier-liner in Cu interconnects for 7 nm and 5 nm technology …