A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the
fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo …

Geometric diodes, which take advantage of geometric asymmetry to achieve current flow
preference, are promising for THz current rectification. Previous studies relate geometric …

Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric
shape, so-called self-switching diodes, are presented. A particular geometry for the …

In this paper, the occupancy of sidewall surface states having a clear signature in the
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …

By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …

In this article, by means of a 2-D ensemble Monte Carlo simulator, the Schottky barrier
diodes (SBDs) with realistic geometries based on GaAs and GaN are studied as promising …

The authors have developed a quantum corrected drift-diffusion model for impact avalanche
transit time (IMPATT) devices by coupling the density gradient model with the classical drift …

Nonlinear electrical characteristics of nanostructured T-branch junctions (TBJs) made of two-
dimensional electron gas in an In Ga As∕ In Al As heterostructure were studied by a …