Plasmonic-Enabled Nanostructures for Designing the Next Generation of Silicon Photodetectors: Trends, Engineering and Opportunities

BA Taha, AJ Addie, AC Kadhim, AS Azzahrani… - Surfaces and …, 2024 - Elsevier
The escalating demand for silicon photodetectors in diverse applications, ranging from
sensing to imaging and communications, has prompted the exploration of innovative …

Design of a metasurface deflector for guided absorption enhancement in a Si PIN photodiode

M Tsubokawa, M Saif Islam - Optics Express, 2024 - opg.optica.org
We numerically demonstrated a surface-illuminated Si PIN photodiode (PD) structure with a
metasurface composed of etched isosceles triangle pillars that can enhance sensitivity in the …

[HTML][HTML] Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

Q Chen, X Zhang, MS Sharawi, R Kashyap - Applied Sciences, 2024 - mdpi.com
High–speed, high–power photodiodes play a key role in wireless communication systems
for the generation of millimeter wave (MMW) and terahertz (THz) waves based on photonics …

Finite-Difference Time-Domain Simulations of Photon-Trapping Nanohole Arrays for Enhanced Optical Absorption in Ultrahigh-Speed GaAs Photodetectors

A S. Mayet, B Das, H Afzal, S Zaman… - ACS Applied Nano …, 2024 - ACS Publications
Although GaAs-based photodetectors have been the dominant technology in optical
communication for decades, the application of submicrometer absorbers for ultrahigh …

Enhanced NIR photo response of ZnO-silicon nanowire array photodetector

E Nam, H Kim, M Meyyappan, K Kim - Applied Surface Science, 2025 - Elsevier
Photodetectors, composed of a single semiconductor such as Si, Ge, GaAs or InGaAs, are
widely used in many fields and their photo-response is determined by the bandgap, thus …

Near‐Infrared Imaging Highly Enhanced by Pixel‐Level Integrated Plasmonic Metasurfaces on CMOS Image Sensors

X Nan, Q Zheng, Y Dong, Y Liu, D Pan… - Advanced Optical …, 2024 - Wiley Online Library
Near‐infrared (NIR) photodetection and imaging have sparked significant interests across a
wide range of applications. While silicon photodiodes are commonly employed, the small …

Efficient third harmonic generation in an all-dielectric metasurface based on tunable bound states in the continuum

Z Sun, X Du, W Yuan, X Wang, F Xia, M Wang… - Optics …, 2025 - Elsevier
Metasurfaces provide opportunities to enhance nonlinear optical processes. In this paper,
we present a nonlinear all-dielectric metasurface with high-quality-factor (high-Q-factor) …

[PDF][PDF] 宽波段响应硅雪崩光电探测器研究

彭红玲, 卫家奇, 宋春旭, 王天财, 曹澎, 陈剑… - 红外与毫米波 …, 2024 - journal.sitp.ac.cn
本文基于目前对宽波段探测器的应用需求, 设计了一种在250~ 1 100 nm 范围有较高响应的硅
雪崩光电探测器(Si APD), 不需要拼接即可实现紫外-可见-近红外波段光的高效探测 …

Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with-3dB bandwidth of> 60 GHz at NIR wavelength

EP Devine, T Yamada, SY Wang, MS Islam - arXiv preprint arXiv …, 2024 - arxiv.org
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si
photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm …

On-chip hyperspectral detectors for fluorescence lifetime imaging

A Ahamed, A Rawat, LN McPhillips… - High-Speed …, 2024 - spiedigitallibrary.org
Fluorescence Lifetime Imaging (FLIM) is a powerful technique that measures the decay time
of fluorophores present in tissue samples alluding to their constituent molecules. FLIM has …