High-dielectric-constant silicon nitride thin films fabricated by radio frequency sputtering in Ar and Ar/N2 gas mixture
CY Chou, CH Lin, WH Chen, BJ Li, CY Liu - Thin Solid Films, 2020 - Elsevier
In this work, dielectric behaviour, photoluminescence (PL), and X-ray photoelectron
spectroscopy (XPS) analyses of silicon nitride (Si-nitride) dielectric films sputtered with radio …
spectroscopy (XPS) analyses of silicon nitride (Si-nitride) dielectric films sputtered with radio …
Characterization and Reliability Study of an Al-Doped HfO-Based High-Density 2.5-D MIMCAP
In this article, the reliability assessment of a 2.5-D metal–insulator–metal (MIM) capacitor,
built in a thicker back-end of line layer using a 23-nm-thick ALD-deposited Al-doped HfO2 …
built in a thicker back-end of line layer using a 23-nm-thick ALD-deposited Al-doped HfO2 …
Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties
MJ Jeong, SW Lee, Y Shin, JH Choi, JH Ahn - Surfaces and Interfaces, 2023 - Elsevier
Rutile-TiO 2 has been actively studied as a high-k candidate for next-generation dynamic
random-access memory (DRAM) capacitors due to its higher dielectric constant compared to …
random-access memory (DRAM) capacitors due to its higher dielectric constant compared to …
High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric
In this paper, three-dimensional (3D) metal-insulator-metal (MIM) structures were obtained
by atomic layer deposition of an aluminum doped TiO 2 layer on a dense array of truncated …
by atomic layer deposition of an aluminum doped TiO 2 layer on a dense array of truncated …
Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrOx
KY Chen, TC Chen, RW Kao, YX Lin… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
HfZrOx (HZO) crystallized in orthorhombic phase formed by plasma-enhanced atomic layer
deposition (ALD) deposition and subsequent 400° C annealing with TiN capping layer was …
deposition (ALD) deposition and subsequent 400° C annealing with TiN capping layer was …
Enhancing capacitance of dielectric Si-oxide film by inserting indium-tin-oxide interlayer
TH Yen, CY Chou, BJ Li, CY Liu - Journal of Physics D: Applied …, 2023 - iopscience.iop.org
Two parallel-plate capacitors, Cu/Si-oxide/Cu (MIM) and Cu/Si-oxide/indium-tin-oxide/Cu
(MIM-ITO), were fabricated. The capacitance of MIM-ITO structure (1365.5 pF) was …
(MIM-ITO), were fabricated. The capacitance of MIM-ITO structure (1365.5 pF) was …
Étude des propriétés piézorésistives de jonctions tunnel MIM pour la réalisation de jauges de déformations
R Rafael - 2018 - theses.hal.science
De nouvelles applications émergent avec le développement de l'électronique souple
comme des panneaux tactiles pliables, ou des capteurs de mouvement humain portables …
comme des panneaux tactiles pliables, ou des capteurs de mouvement humain portables …