Semipolar GaN grown on foreign substrates: a review
F Scholz - Semiconductor Science and technology, 2012 - iopscience.iop.org
Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …
attention in recent years. Best results have been obtained on small bulk substrates cut from …
Luminescence associated with stacking faults in GaN
J Lähnemann, U Jahn, O Brandt… - Journal of Physics D …, 2014 - iopscience.iop.org
Basal-plane stacking faults are an important class of optically active structural defects in
wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a …
wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a …
Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization
Low temperature spatially resolved cathodoluminescence was carried out on GaN films
grown by the epitaxial-lateral-overgrowth (ELO) technique with the nonpolar (11-20) and the …
grown by the epitaxial-lateral-overgrowth (ELO) technique with the nonpolar (11-20) and the …
Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
The optical properties of GaN/Al 0.15 Ga 0.85 N multiple quantum wells are examined in 8 K–
300 K temperature range. Both polarized CW and time resolved temperature-dependent …
300 K temperature range. Both polarized CW and time resolved temperature-dependent …
High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
MH Lo, PM Tu, CH Wang, CW Hung, SC Hsu… - Applied Physics …, 2009 - pubs.aip.org
We report the fabrication and study of high efficiency ultraviolet light emitting diodes with
inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures …
inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures …
Optical properties of nonpolar a-plane GaN layers
We have studied optical properties of nonpolar a-plane GaN layers grown on r-plane
sapphire by metalorganic chemical vapor deposition and hydride vapor phase epitaxy using …
sapphire by metalorganic chemical vapor deposition and hydride vapor phase epitaxy using …
Defect-related luminescence in undoped GaN grown by HVPE
MA Reshchikov, A Usikov, H Helava… - Journal of Electronic …, 2015 - Springer
Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have
grown undoped films on sapphire and investigated them using steady-state and time …
grown undoped films on sapphire and investigated them using steady-state and time …
Strong carrier localization in stacking faults in semipolar (11-22) GaN
S Okur, M Monavarian, S Das… - … and Devices X, 2015 - spiedigitallibrary.org
The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar
(1122) GaN on m-sapphire substrate have been investigated in detail using steady-state …
(1122) GaN on m-sapphire substrate have been investigated in detail using steady-state …
[图书][B] Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations
M Monavarian - 2016 - search.proquest.com
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-
green light emitters remains relatively low, and that limits progress in developing full color …
green light emitters remains relatively low, and that limits progress in developing full color …
Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells
The structural properties of a-plane AlGaN/GaN multiple quantum wells grown on the r-
plane sapphire substrate have been characterized. The pentagonal and inverted octagonal …
plane sapphire substrate have been characterized. The pentagonal and inverted octagonal …