GeSn has attracted increasing attention due to its tunable bandgap from indirect to direct
resulting in unique electronic and optoelectronic capabilities. Chemical vapor deposition …

Capturing thermal radiation using highly infrared (IR)-transparent materials have drawn
great attention for diverse applications, such as IR guidance, IR detection, thermal radiation …

Direct band gap GeSn alloys have recently emerged as promising lasing source materials
for monolithic integration on Si substrate. In this work, optically pumped mid-infrared GeSn …

Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using
molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and …

The physical and chemical features of the SiGe1− xSnx ternary alloy structured in cubic
phase are investigated. Three distinct approaches (PBE-GGA),(PW-LDA), and (PW-LDA) are …

The study of all-group-IV SiGeSn lasers has opened a new avenue to Si-based light
sources. SiGeSn heterostructure and quantum well lasers have been successfully …

In this study, we propose a theoretical simulation of the type-I step quantum well obtained
from GeSn/SiGeSn to scan a wide range of telecommunication wavelengths and obtain near …

Multi quantum wells (MQWs) structures based on (Si) GeSn hold promise for near-and mid-
infrared light emission and photodetection applications on the Si platform. An MQW …

Silicon photonic integrated circuits enable the capability of producing on-chip processing of
photonic signals, including both emission and detection. Emission materials, however, have …