The quantum Hall effect in the era of the new SI

AF Rigosi, RE Elmquist - Semiconductor science and technology, 2019 - iopscience.iop.org
The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the
foundation of the ohm while also expanding its territory into other SI derived units. The …

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

Y Xu, I Miotkowski, C Liu, J Tian, H Nam, N Alidoust… - Nature Physics, 2014 - nature.com
Abstract A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with
a gapped insulating bulk yet a conducting surface hosting topologically protected gapless …

Combining graphene with silicon carbide: synthesis and properties–a review

I Shtepliuk, V Khranovskyy… - … Science and Technology, 2016 - iopscience.iop.org
Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that
would enable unique applications. Integration of graphene with inorganic semiconductors …

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R Ribeiro-Palau, F Lafont, J Brun-Picard… - Nature …, 2015 - nature.com
The quantum Hall effect provides a universal standard for electrical resistance that is
theoretically based on only the Planck constant h and the electron charge e. Currently, this …

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

M Kruskopf, DM Pakdehi, K Pierz, S Wundrack… - 2D …, 2016 - iopscience.iop.org
We present a new fabrication method for epitaxial graphene on SiC which enables the
growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented …

Giant atomic swirl in graphene bilayers with biaxial heterostrain

F Mesple, NR Walet… - Advanced …, 2023 - Wiley Online Library
The study of moiré engineering started with the advent of van der Waals heterostructures, in
which stacking 2D layers with different lattice constants leads to a moiré pattern controlling …

[HTML][HTML] Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F Lafont, R Ribeiro-Palau, D Kazazis, A Michon… - Nature …, 2015 - nature.com
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards
(QHRS), accurate to within 10− 9 in relative value, but operating at lower magnetic fields …

Universality of quantum phase transitions in the integer and fractional quantum Hall regimes

S Kaur, T Chanda, KR Amin, D Sahani… - Nature …, 2024 - nature.com
Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are
characterized by anyonic quasiparticles, each distinguished by unique topological …

[HTML][HTML] Direct observation of resistive heating at graphene wrinkles and grain boundaries

KL Grosse, VE Dorgan, D Estrada, JD Wood… - Applied Physics …, 2014 - pubs.aip.org
We directly measure the nanometer-scale temperature rise at wrinkles and grain boundaries
(GBs) in functioning graphene devices by scanning Joule expansion microscopy with∼ 50 …

Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

T Wang, JR Huntzinger, M Bayle, C Roblin, JM Decams… - Carbon, 2020 - Elsevier
The so-called buffer layer (BL) is a carbon rich reconstructed layer formed during SiC (0001)
sublimation. The covalent bonds between some carbon atoms in this layer and underlying …